Recent progress of fet-type ferroelectric memories

Integrated Ferroelectrics

Volumn 34, Issue 1-4, 2001, Pages 11-20

  Ishiwara, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Depolarization field; Ferroelectric gate FET; MFSFET; Nondestructive readout; Retention time

Indexed keywords

FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; READOUT SYSTEMS; SILICON WAFERS;

DEPOLARIZATION FIELD; FERROELECTRIC MEMORIES; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR; RETENTION TIME;

FERROELECTRIC DEVICES;

EID: 0035036915     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584580108012869     Document Type: Conference Paper

References (7)