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Volumn , Issue , 2008, Pages 169-172

Simulation of single and multi-layer graphene field-effect devices

Author keywords

Bandgap; Diffusion drift; Graphene; Multi layers

Indexed keywords

BANDGAP; FIELD-EFFECT DEVICES; GRAPHENE; HOLE TRANSPORTS; SMALL BANDGAP;

EID: 67650388236     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2008.4648264     Document Type: Conference Paper
Times cited : (1)

References (11)
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    • B. Ozyilmaz et al, "Electronic transport in locally gated graphene nanoconstrictions," Appl. Phys. Lett. 91, 192107 (2007).
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  • 2
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    • Ballistic transport in graphene nanostrips in the presence of disorder: Importance of edge effects
    • D.A. Areshkin, D. Gunlycke and C.T. White, "Ballistic transport in graphene nanostrips in the presence of disorder: Importance of edge effects," Nano Letts. 7, 204 (2007).
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  • 3
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    • Substrate-induced bandgap opening in epitaxial graphene
    • S.Y. Zhou et al., "Substrate-induced bandgap opening in epitaxial graphene," Nature Mat. 6, 770 (2007).
    • (2007) Nature Mat , vol.6 , pp. 770
    • Zhou, S.Y.1
  • 4
    • 43049117196 scopus 로고    scopus 로고
    • Origin of anomalous electronic structures of epitaxial graphene on silicon carbide
    • S. Kim, J. Ihm, H.J. Choi and Y.-W. Son, "Origin of anomalous electronic structures of epitaxial graphene on silicon carbide," Phys. Rev. Lett. 100, 176802 (2008).
    • (2008) Phys. Rev. Lett , vol.100 , pp. 176802
    • Kim, S.1    Ihm, J.2    Choi, H.J.3    Son, Y.-W.4
  • 6
    • 43049170468 scopus 로고    scopus 로고
    • Ultrahigh electron mobility in suspended graphene
    • K.I. Bolotin et al., "Ultrahigh electron mobility in suspended graphene," Solid-St. Comm. 46, 351 (2008).
    • (2008) Solid-St. Comm , vol.46 , pp. 351
    • Bolotin, K.I.1
  • 7
    • 36348943354 scopus 로고    scopus 로고
    • T. Stauber, N. Peres and F. Guinea, Electronic transport in graphene: A semiclassical approach including midgap states, Phys. Rev. B 76, 205423 (2007).
    • T. Stauber, N. Peres and F. Guinea, "Electronic transport in graphene: A semiclassical approach including midgap states," Phys. Rev. B 76, 205423 (2007).
  • 9
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    • Graphene field-effect devices from a diffusion-drift perspective
    • to be published
    • M.G. Ancona, "Graphene field-effect devices from a diffusion-drift perspective," to be published, J. Comp. Elect. (2008).
    • (2008) J. Comp. Elect
    • Ancona, M.G.1
  • 10
    • 0026923596 scopus 로고
    • A new analytical diode model including tunneling and avalanche breakdown
    • G. Hurkx, H. de Graaff, W. Kloosterman and M. Knuvers, "A new analytical diode model including tunneling and avalanche breakdown," IEEE Trans. Elect. Dev. 39, 2090 (1992).
    • (1992) IEEE Trans. Elect. Dev , vol.39 , pp. 2090
    • Hurkx, G.1    de Graaff, H.2    Kloosterman, W.3    Knuvers, M.4
  • 11
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    • Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications
    • T. Ashley et al., "Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications," Elect. Letts. 43, 777 (2007).
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    • Ashley, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.