High-density silicon nanocrystal formed on nitrided tunnel oxide for nonvolatile memory application

Electrochemical and Solid-State Letters

Volumn 11, Issue 6, 2008, Pages

  Wu, Yung Hsien ^a   Kao, Chien Kang ^b   Wang, Chun Yao ^a,b   Lin, Yuan Sheng ^a   Chang, Chih Ming ^a,b   Chuang, Chih Hsiang ^a   Lee, Chia Yun ^a   Kuo, Chia Ming ^b   Ku, Alex ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b ProMOS Technologies Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; NANOCRYSTALS; NUCLEATION; OXIDES;

NANOCRYSTAL DENSITY; NITRIDED TUNNEL OXIDE; NONVOLATILE MEMORY APPLICATION;

SILICON;

EID: 42349096073     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2895018     Document Type: Article

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