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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 3, 2002, Pages 589-596

Effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane-modified SiO2 substrates

(6) Hu, Minghui a Noda, Suguru a Tsuji, Yoshiko a Okubo, Tatsuya a Yamaguchi, Yukio a Komiyama, Hiroshi a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ENERGY DISPERSIVE SPECTROSCOPY; GROWTH (MATERIALS); MORPHOLOGY; PLASMAS; SILANES; SILICA; SPUTTER DEPOSITION; SUBSTRATES; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CONTACT ANGLE MEASUREMENT; INITIAL GROWTH; INTERFACIAL INTERACTIONS; MERCAPTOPROPYLTRIMETHOXYSILANE; PLASMA DAMAGE;

SURFACE PROPERTIES;

EID: 0036565382 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1458941 Document Type: Article

Times cited : (46)

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