BC35: a 0.35 μm, 30 GHz, production RF BiCMOS technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1999, Pages 125-128

  Racanelli, Marco ^a   Zhang, Zhe ^a   Zheng, Jie ^a   Kar Roy, Arjun ^a   Joshi, Pankaj ^a   Kalburge, Amol ^a   Nathawad, Lalit ^a   Todd, Michael ^a   Ukah, Clement ^a   Hu, Chun ^a   Compton, Cory ^a   Schuegraf, Klaus ^a   Ye, Peihua ^a   Dowlatshahi, Reza ^a   Jolly, Gurvinder ^a   et al , ^a  

^a Rockwell Semiconductor Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CAPACITORS; CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; FREQUENCIES; MIM DEVICES; MIS DEVICES; PASSIVE NETWORKS; RESISTORS; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VARACTORS;

MIM CAPACITOR; MIS CAPACITOR; RF BICMOS TECHNOLOGY; SILICON GERMANIUM;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0033280131     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)