Large-signal performance of high-BVCEO graded epi-base SiGe HBTs at wireless frequencies

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 799-802

  Greenberg, D R ^a   Rivier, M ^a   Girard, P ^a   Bergeault, E ^a   Moniz, J ^a   Ahlgren, D ^a   Freeman, G ^a   Subbanna, S ^a   Jeng, S J ^a   Stein, K ^a   Nguyen Ngoc, D ^a   Schonenberg, K ^a   Malinowski, J ^a   Colavito, D ^a   Harame, D L ^a   Meyerson, B ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POWER DENSITY; WIRELESS COMPONENTS;

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN OF SOLIDS; POWER AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84886448112     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)