The relationship among electromigration, passivation thickness, and common-emitter current gain degradation within shallow junction NPN bipolar transistors

Journal of Applied Physics

Volumn 53, Issue 6, 1982, Pages 4456-4462

  Hemmert, R S ^a   Prokop, G S ^a   Lloyd, J R ^a   Smith, P M ^a   Calabrese, G M ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, BIPOLAR;

EID: 0020138950     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.331231     Document Type: Article

References (40)