A PHYSICAL MODEL FOR PLANAR SPIRAL INDUCTORS ON SILICON

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 155-158

  Yue, C Patrick ^a   Ryu, Changsup ^a   Lau, Jack ^b   Lee, Thomas H ^a   Wong, S Simon ^a  

^a Stanford University ^*  (United States)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INDUCTORS; CAPACITANCE; EDDY CURRENTS; INTEGRATED CIRCUIT LAYOUT; OPTIMIZATION; SEMICONDUCTING SILICON;

INDUCTORS ON SILICON; PHYSICAL MODELLING; PLANAR SPIRAL INDUCTOR; PROCESS PARAMETERS; QUALITY FACTORS;

SILICON; SEMICONDUCTOR DEVICE MODELS;

INDUCTOR GEOMETRY; PLANAR SPIRAL INDUCTORS; QUALITY FACTOR;

EID: 0030381980     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553144     Document Type: Conference Paper

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