63.2% High efficiency and high linearity two-stage InGaP/GaAs HBT power amplifier for personal digital cellular phone system

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1998, Pages 435-438

  Iwai, T ^a   Ohara, S ^a   Miyashita, T ^a   Joshin, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; DIGITAL COMMUNICATION SYSTEMS; HETEROJUNCTION BIPOLAR TRANSISTORS; PERSONAL COMMUNICATION SYSTEMS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ADJACENT CHANNEL LEAKAGE POWER (ACP); POWER ADDED EFFICIENCY (PAE);

MICROWAVE AMPLIFIERS;

EID: 0031635772     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)