Trade-offs in the integration of high performance devices with trench capacitor DRAM

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 45-48

  Crowder, S ^a   Stiffler, S ^a   Parries, P ^a   Bronner, G ^a   Nesbit, L ^a   Wille, W ^a   Powell, M ^a   Ray, A ^a   Chen, B ^a   Davari, B ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS MEMORY (DRAM);

CAPACITORS; COMPUTER ARCHITECTURE; LOGIC DEVICES;

RANDOM ACCESS STORAGE;

EID: 84886448081     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)