A 900-MHz/1.8-GHz CMOS receiver for dual-band applications

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 12, 1998, Pages 2178-2185

  Wu, Stephen ^a,b,c   Razavi, Behzad ^{a,d,e,f,g,h,i}  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b BethelTronix Inc   (United States)

^c RAYTHEON COMPANY   (United States)

^d UNIVERSITY OF TEHRAN   (Iran)

^e STANFORD UNIVERSITY   (United States)

^f LUCENT TECHNOLOGIES   (United States)

^g HEWLETT PACKARD LABORATORIES   (United States)

^h PRINCETON UNIVERSITY   (United States)

ⁱ Dept of the Analog Subcommittee ^*

Author keywords

Low noise amplifiers (LNA's); Mixers; RF receivers; Wireless communications

Indexed keywords

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; OSCILLATORS (ELECTRONIC); STANDARDS;

LOW NOISE AMPLIFIER; RADIO FREQUENCY RECEIVER;

SIGNAL RECEIVERS;

EID: 0032308788     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.735702     Document Type: Article

References (13)

1. T. Antes and C. Conkling, "RF chip set fits mutlimode cellular/PCS handsets," Microwaves RF, pp. 177-186, Dec. 1996.
2. S. Wu and B. Razavi, "A 900-MHz/1.8-GHz CMOS receiver for dual band applications," in ISSCC Dig. Tech. Papers, Feb. 1998, pp. 124-125.
3. R. Hartley, "Modulation system," U.S. Patent 1 666 206, Apr. 1928.
4. B. Razavi, RF Microelectronics, Englewood Cliffs, NJ: Prentice-Hall, 1998.
5. D. K. Weaver, Jr., "A third method of generation and detection of single-sideband signals," Proc. IRE, pp. 1703-1705, June 1956.
6. T. Okanobu, D. Yamazaki, and C. Nishi, "A new radio receiver system for personal communications," IEEE Trans. Consumer Electron., vol. 41, pp. 795-802, Aug. 1995.
7. J. C. Rudell et al., "A 1.9 GHz wide-band IF double conversion CMOS integrated receiver for cordless telephone applications," in ISSCC Dig. Tech. Papers, Feb. 1997, pp. 304-305.
8. B. Razavi, "Design considerations for direct-conversion receivers," IEEE Trans. Circuits Syst. II, vol. 44, pp. 428-435, June 1997.
9. A. A. Abidi, "Direct-conversion radio transceivers for digital communications," IEEE J. Solid-State Circuits, vol. 30, pp. 1399-1410 Dec. 1995.
10. D. K. Shaeffer and T. H. Lee, "A 1.5V, 1.5GHz CMOS low noise amplifier," in Symp. VLSI Circuits Dig. Tech. Papers, June 1996. pp. 32-33.
11. R. B. Merill et al., "Optimization of high Q integrated inductors for multi-level metal CMOS," in Proc. IEDM, Dec. 1995, pp. 38.7.1-38.7.4.
12. A. Rofougaran et al., "A 1-GHz CMOS front end IC for a direct-conversion wirless receiver," IEEE J. Solid-State Circuits, vol. 31, pp. 880-89, July 1996.
13. B. Razavi, "A 900-MHz/1.8-GHz CMOS transmitter for dual-band applications," in Symp. VLSI Circuits Dig. Tech. Papers, June 1998, pp. 128-131.