Intermodulation characteristics of UHV/CVD SiGe HBT's

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1999, Pages 50-53

  Niu, Guofu ^a   Cressler, John D ^a   Ansley, William E ^a   Webster, Charles S ^a   Anna, Raghunadha B ^a   King, Nathaniel ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; INTERMODULATION MEASUREMENT; MATHEMATICAL MODELS; SCATTERING PARAMETERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; VACUUM APPLICATIONS;

DEPLETION CAPACITANCE; DIFFUSION CAPACITANCE; LINEARITY EFFICIENCY; SILICON GERMANIUM; SOFTWARE PACKAGE SPICE; ULTRAHIGH VACUUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033280992     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)