Ion-induced nanopatterns on semiconductor surfaces investigated by grazing incidence x-ray scattering techniques

Journal of Physics Condensed Matter

Volumn 21, Issue 22, 2009, Pages

  Carbone, D ^a   Biermanns, A ^b   Ziberi, B ^c   Frost, F ^c   Plantevin, O ^d   Pietsch, U ^b   Metzger, T H ^a  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b UNIVERSITY OF SIEGEN   (Germany)

^c LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^d UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORN APPROXIMATION; CRYSTALLINE MATERIALS; ION BEAMS; IONS; X RAY SCATTERING;

DISTORTED WAVE BORN APPROXIMATION; GRAZING-INCIDENCE X-RAY SCATTERING; IN-SITU MEASUREMENT; NANOSTRUCTURE FORMATION; SEMI-CONDUCTOR SURFACES; SPUTTERING CHAMBER; STATISTICAL ACCURACY; TEMPORAL EVOLUTION;

SURFACE SCATTERING;

EID: 66249091259     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/22/224007     Document Type: Article

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