Microstructural anisotropy at the ion-induced rippled amorphous-crystalline interface of silicon

Applied Physics Letters

Volumn 89, Issue 23, 2006, Pages

  Grigorian, S ^a   Pietsch, U ^a   Grenzer, J ^b   Datta, D P ^c   Chini, T K ^c   Hazra, S ^c   Sanyal, M K ^c  

^a UNIVERSITY OF SIEGEN   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c SAHA INSTITUTE OF NUCLEAR PHYSICS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTALLOGRAPHY; INTERFACES (MATERIALS); ION BOMBARDMENT; MICROSTRUCTURE; PHASE TRANSITIONS; X RAY SCATTERING;

INITIAL CRYSTALLINE STRUCTURE; MICROSTRUCTURAL ANISOTROPY; RIPPLED AMORPHOUS CRYSTALLINE INTERFACE; TRANSITION LAYERS;

SILICON;

EID: 33845405717     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2402212     Document Type: Article

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