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Volumn 14, Issue 5, 1996, Pages 2709-2720

Influence of O+2 energy, flux, and fluence on the formation and growth of sputtering-induced ripple topography on silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0030486547     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580192     Document Type: Article
Times cited : (114)

References (40)
  • 15
    • 4243096716 scopus 로고
    • edited by A. Benninghoven, Y. Nihei, R. Shimizu, and H. W. Werner Wiley, New York
    • Y. Matsuura, H. Shichi, and Y. Mitsui, in Secondary Ion Mass Spectrometry SIMS IX, edited by A. Benninghoven, Y. Nihei, R. Shimizu, and H. W. Werner (Wiley, New York, 1994), p. 734.
    • (1994) Secondary Ion Mass Spectrometry SIMS IX , pp. 734
    • Matsuura, Y.1    Shichi, H.2    Mitsui, Y.3
  • 30
    • 85033852476 scopus 로고    scopus 로고
    • Version 1.0al by S. Davilla and D. Kopf, Duke University, 1992
    • Version 1.0al by S. Davilla and D. Kopf, Duke University, 1992.
  • 34
    • 0004255385 scopus 로고
    • Minerals, Metals and Materials Society, Warrendale, Pennsylvania
    • P. Shewmon, Diffusion in Solids, 2nd ed. (Minerals, Metals and Materials Society, Warrendale, Pennsylvania, 1989).
    • (1989) Diffusion in Solids, 2nd Ed.
    • Shewmon, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.