AlN buffer layer growth for GaN epitaxy on (1 1 1) Si: Al or N first?

Journal of Crystal Growth

Volumn 311, Issue 12, 2009, Pages 3278-3284

  Le Louarn, A ^a   Vezian S ^a   Semond, F ^a   Massies, J ^a  

^a CNRS   (France)

Author keywords

A1. RHEED; A3. MBE; B1. Nitrides

Indexed keywords

A1. RHEED; A3. MBE; ALN; ALN BUFFER; B1. NITRIDES; DISLOCATION DENSITIES; GAN EPITAXIAL LAYERS; NITROGEN SOURCES; ORDER OF MAGNITUDE; OVERALL PROPERTIES; REAL-SPACE; SCANNING TUNNELLING MICROSCOPY; SI (1 1 1); SI SURFACES;

ALUMINUM; ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; CRYSTAL GROWTH; DIFFRACTION; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL GROWTH;

EID: 66149185544     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.04.001     Document Type: Article

References (31)

1. Calleja E., Sánchez-Garcia M.A., Monroy E., Sánchez F.J., Muñoz E., Sanz-Hervás A., Villar C., and Aguilar M. J. Appl. Phys. 82 (1997) 4681
2. Nakada Y., Aksenov I., and Okumura H. Appl. Phys. Lett. 73 (1998) 827
3. Semond F., Damilano B., Vézian S., Grandjean N., Leroux M., and Massies J. Appl. Phys. Lett. 75 (1999) 82
4. Nikishin S.A., Antipov V.G., Francoeur S., Faleev N.N., Seryogin G.A., Elyukhin V.A., Temkin H., Prokofyeva T.I., Holtz M., Konkar A., and Zollner S. Appl. Phys. Lett. 75 (1999) 484
5. Marchand H., Zhao L., Zhang N., Moran B., Coffie R., Mishra U.K., Speck J.S., Denbaars S.P., and Freitas J.A. J. Appl. Phys. 89 (2001) 7846
6. Wu C.-L., Wang J.-C., Chan M.-H., Chen T.T., and Gwo S. Appl. Phys. Lett. 83 (2003) 4530
7. Zhang N.H., Wang X.L., Zeng Y.P., Xiao H.L., Wang J.X., Liu H.X., and Li J.M. J. Cryst. Growth 280 (2005) 346
8. Cheng K., Leys M., Degroote S., Derluyn J., Sijmus B., Favia P., Richard O., Bender H., Germain M., and Borghs G. Jpn. J. Appl. Phys. 47 (2008) 1553
9. Yamabe N., Shimomura H., Shimamura T., and Ohachi T. J. Cryst. Growth (2009) 10.1016/j.jcrysgro.2009.01.076
10. Yang J.W., Lunev A., Simin G., Chitnis A., Shatalov M., Asif Khan M., Van Nostrand J.E., and Gaska R. Appl. Phys. Lett. 76 (2000) 273
11. Semond F., Lorenzini P., Grandjean N., and Massies J. Appl. Phys. Lett. 78 (2001) 335
12. Dadgar A., Poschenrieder M., Bläsing J., Fehse K., Diez A., and Krost A. Appl. Phys. Lett. 80 (2002) 3670
13. Behtash R., Tobler H., Neuburger M., Schurr A., Leier H., Cordier Y., Semond F., Natali F., and Massies J. Electron. Lett. 39 (2003) 626
14. Dumka D.C., Lee C., Tserng H.Q., Saunier P., and Kumar M. Electron. Lett. 40 (2004) 1023
15. Johnson J.W., Piner E.L., Vescan A., Therrien R., Rajagopal P., Roberts J.C., Brown J.D., Singhal S., and Linthicum K.L. IEEE Dev. Lett. 25 (2004) 459
16. Arulkumaran S., Egawa T., and Ishikawa H. Solid-State Electron. 49 (2005) 1632
17. Yoshida S., Li J., and Ikeda N. Phys. Status Solidi C 2 (2005) 2593
18. D. Ueda, T. Murata, M. Hikita, S. Nakazawa, M. Kuroda, H. Ishida, M. Yanagihara, K. Inoue, T. Ueda, Y. Uemoto, T. Tanaka, T. Egawa, Technical Digest-International Electron Devices Meeting, 389, 2005
19. Semond F., Cordier Y., Grandjean N., Natali F., Damilano B., Vézian S., and Massies J. Phys. Status Solidi A 188 (2001) 501
20. Vézian S., Le Louarn A., and Massies J. J. Cryst. Growth 303 (2007) 419
21. Ahn H., Wu C.-L., Gwo S., Wei C.M., and Chou Y.C. Phys. Rev. Lett. 86 (2001) 2818
22. Wu C.-L., Wang J.-C., Chan M.-H., Chen T.T., and Gwo S. Appl. Phys. Lett. 83 (2003) 4530
23. Gröger R., and von Blanckenhagen P. Thin Solid Films 281-282 (1996) 73
24. Saranin A.A., Kotlyar V.G., Zotov A.V., Kasyanova T.V., Cherevik M.A., and Lifshits V.G. Surf. Sci. 517 (2002) 151
25. Vézian S., Massies J., Semond F., Grandjean N., and Vennéguès P. Phys. Rev. B 61 (2000) 7618
26. Michely T., Reuter M.C., and Tromp R.M. Phys. Rev. B 53 (1996) 4105
27. Smith A.R., Feenstra R.M., Greve D.W., Shin M.-S., Skowronski M., Neugebauer J., and Northrup J.E. Appl. Phys. Lett. 72 (1998) 2114
28. Lebedev V., Schröter B., Kipshidze G., and Richter W. J. Cryst. Growth 207 (1999) 466
29. Vézian S., Natali F., Semond F., and Massies J. Phys. Rev. B 69 (2004) 125329
30. Vézian S., Massies J., Semond F., and Grandjean N. Mater. Sci. Eng. B 82 (2001) 56
31. Baron N., Cordier Y., Chenot S., Vennéguès P., Tottereau O., Leroux M., Semond F., and Massies J. J. Appl. Phys. 105 (2009) 033701