Cu electrochemical mechanical planarization surface quality

Journal of the Electrochemical Society

Volumn 156, Issue 7, 2009, Pages

  Tripathi, Abhinav ^a   Suni, Ian Ivar ^a   Li, Yuzhuo ^b   Doniat, Francois ^c   McAndrew, James ^c  

^a Clarkson University   (United States)

^b CLARKSON UNIVERSITY   (United States)

^c AIR LIQUIDE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE TECHNOLOGIES; ANODIC POTENTIALS; CHEMICAL-MECHANICAL PLANARIZATION; CMP SLURRY; COATED WAFERS; COMPLEXING AGENTS; CONSTANT PHASE ELEMENT; CU OXIDE; ELECTROCHEMICAL MECHANICAL PLANARIZATION; IMPEDANCE MEASUREMENT; INFLUENCE OF PH; OPEN-CIRCUIT POTENTIAL; OXALIC ACID; PASSIVE FILMS; REMOVAL RATE; SURFACE QUALITIES; TETRAZOLE;

ELECTROCHEMICAL CORROSION; NANOTECHNOLOGY; REMOVAL; SURFACE ROUGHNESS;

ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY;

EID: 65949120412     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3125703     Document Type: Article

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