Lead-zirconate-titanate-based metal/ferroelectric/insulator/semiconductor structure for nonvolatile memories

Journal of Applied Physics

Volumn 91, Issue 9, 2002, Pages 5985-5996

  Liu, Mingjiao ^a   Kim, Hong Koo ^a   Blachere, Jean ^a  

^a University of Pittsburgh   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SURFACES; DIELECTRIC AND FERROELECTRIC PROPERTIES; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; FERROELECTRIC LAYERS; LAYER THICKNESS; LEAD ZIRCONATE TITANATE; LOW-VOLTAGE; MEASUREMENT DATA; MEMORY WINDOW; MFIS STRUCTURE; MGO; MGO-BUFFER; NON-VOLATILE MEMORIES; OXIDIZED SILICON SUBSTRATES; PB(ZR , TI)O; PZT; PZT FILM; RF MAGNETRON SPUTTERING TECHNIQUE; SI SUBSTRATES; STRUCTURAL AND ELECTRICAL PROPERTIES; TEMPLATE LAYERS; TWO LAYER MODEL; TWO-LAYER STRUCTURES;

AMORPHOUS FILMS; AMORPHOUS SILICON; COMPUTER SIMULATION; ELECTRIC PROPERTIES; ENERGY DISPERSIVE SPECTROSCOPY; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; FILM GROWTH; LEAD; MAGNETRON SPUTTERING; NUMERICAL ANALYSIS; SILICON; SILICON OXIDES; SUBSTRATES; X RAY DIFFRACTION; ZIRCONIUM;

FERROELECTRIC FILMS;

EID: 0036573144     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1465504     Document Type: Article

References (16)

1. Nonvolatile Semiconductor Memory Technology, edited by W.D. Brown and J.E. Brewer (IEEE, New York, 1997).
2. See, for example, R. E. Jones, P. D. Maniar, R. Moazzami, P. Zurcher, J. Z. Witowski, Y. T. Lii, P. Chu, and S. J. Gillespie, Thin Solid Films 270, 584 (1995). tsf THSFAP 0040-6090
3. S. Y. Wu, IEEE Trans. Electron Devices 21, 499 (1974). etd IETDAI 0018-9383
4. S. L. Miller and P. J. McWhorter, J. Appl. Phys. 72, 5999 (1992). jap JAPIAU 0021-8979
5. E. Tokumitsu, R. Nakamura, and H. Ishiwara, IEEE Electron Device Lett. 18, 160 (1997). edl EDLEDZ 0741-3106
6. H. Buhay, S. Sinharoy, W. H. Kasner, M. H. Francombe, D. R. Lampe, and E. Stepke, Appl. Phys. Lett. 58, 1470 (1991). apl APPLAB 0003-6951
7. T. Hirai, K. Teramoto, T. Hishi, T. Coto, and Y. Tarui, Jpn. J. Appl. Phys., Part 1 33, 5219 (1994). jjb JAPNDE 0021-4922
8. N. A. Basit, H. K. Kim, and J. Blachere, Appl. Phys. Lett. 73, 3941 (1998). apl APPLAB 0003-6951
9. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Chap. 7.2.
10. S. L. Miller, R. D. Nasby, J. R. Schwank, M. S. Rodgers, and P. V. Dressendorfer, J. Appl. Phys. 68, 6463 (1990). jap JAPIAU 0021-8979
11. S. L. Miller, J. R. Schwank, R. D. Nasby, and M. S. Rodgers, J. Appl. Phys. 70, 2849 (1991). jap JAPIAU 0021-8979
12. N. A. Basit, H. K. Kim, and J. Blachere, Thin Solid Films 302, 155 (1997); tsf THSFAP 0040-6090
13. N. A. Basit and H. K. Kim, J. Vac. Sci. Technol. A 13, 2214 (1995). jva JVTAD6 0734-2101
14. C. P. Wang, K. B. Do, M. R. Beasley, T. H. Geballe, and R. H. Hammond, Appl. Phys. Lett. 71, 2955 (1997). apl APPLAB 0003-6951
15. C. D. Lakeman and D. Payne, Ferroelectrics 152, 145 (1994). fer FEROA8 0015-0193
16. P. K. Larsen, G. J. M. Dormans, D. J. Taylor, and P. J. van Veldhoven, J. Appl. Phys. 76, 2405 (1994). jap JAPIAU 0021-8979