Influence of buffer layer thickness on memory effects of SrBi 2Ta 2O 9/SiN/Si structures

Applied Physics Letters

Volumn 85, Issue 8, 2004, Pages 1439-1441

  Han, Jin Ping ^a   Koo, Sang Mo ^a   Richter, Curt A ^a   Vogel, Eric M ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; FERROELECTRIC DYNAMIC RANDOM ACCESS MEMORY (FEDRAM); MEMORY WINDOWS; TEMPERATURE DEPENDENCE;

DYNAMIC RANDOM ACCESS STORAGE; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HYSTERESIS; PARAMETER ESTIMATION; PROBLEM SOLVING; SEMICONDUCTOR MATERIALS; SILICON NITRIDE; SUBSTRATES; THIN FILMS;

STRONTIUM COMPOUNDS;

EID: 4544385922     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1771458     Document Type: Article

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