Improvement of NBTI and Electrical Characteristics by Ozone Pre-treatment and PBTI issues in HfAIO(N) High-k Gate Dielectrics

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 943-946

  Doh, Seok Joo ^a   Jung, Hyung Suk ^a   Kim, Yun Seok ^a   Lim, Ha Jin ^a   Kim, Jong Pyo ^a   Lee, Jung Hyoung ^a   Lee, Jong Ho ^a   Lee, Nae In ^a   Kang, Ho Kyu ^a   Suh, Kwang Pyuk ^a   Park, Seong Geon ^a   Kang, Sang Bom ^a   Choi, Gil Heyun ^a   Chung, Young Su ^b   Baik, Hion Suck ^b   Chang, Hyo Sik ^c   Cho, Mann Ho ^c   Moon, Dae Won ^c   Park, Hong Bae ^d   Cho, Moonju ^d   Hwang, Cheol Seong ^d   more..

^a SAMSUNG Electronics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

^d Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE INSTABILITY (BTI); INTERFACIAL LAYERS;

DEGRADATION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRODES; GATES (TRANSISTOR); OPTIMIZATION; OZONE; POLYSILICON; SUBSTRATES; THERMAL EFFECTS;

HAFNIUM COMPOUNDS;

EID: 17644443159     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. Koyama, et al., "Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics," Tech. Dig. IEDM, p.849, 2002.
2. E. P. Gusev, et al., "Ultrathin High-k Gate Stacks for Advanced CMOS Devices," Tech. Dig. IEDM," p.451, 2001.
3. Y. Morisaki, et al., "Ultra-thin (Teff,inv=1.7 nm) poly-Si-gated SiN/HfO2//SiON high-k stack dielectrics with high thermal stability (1050°C)," Tech. Dig. IEDM, p.861, 2002.
4. N. Kimizuka, et al, "NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-μm gate CMOS generation," Tech. Dig. VLSI, p.92, 2000.
5. C. E. Blat, E. H. Nicollian, and E. H. Poindexter, "Mechanism of negative-bias-temperature instability," J. Appl. Phys., vol. 69, p.1712, 1991.