Design and performance of EUV resist containing photoacid generator for sub-100 nm Lithography

Journal of Nanoscience and Nanotechnology

Volumn 5, Issue 7, 2005, Pages 1181-1183

  Thiyagarajan, Muthiah ^a   Gonsalves, Kenneth E ^a   Dean, Kim ^b   Sykes, E Charles H ^a  

^a UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

^b SEMATECH   (United States)

Author keywords

Chemically Amplified Resists; Extreme Ultraviolet; Lithography; Photoacid Generator

Indexed keywords

CHEMICALLY AMPLIFIED RESISTS; EXTREME ULTRAVIOLET; PHOTOACID GENERATORS;

AMPLIFICATION; NANOTECHNOLOGY; NEGATIVE IONS; PHOTOLITHOGRAPHY; SYNTHESIS (CHEMICAL); ULTRAVIOLET RADIATION;

PHOTORESISTS;

ACRYLIC ACID DERIVATIVE; ANION; METHACRYLIC ACID DERIVATIVE; PHENYL METHACRYLATE; PHENYL METHACRYLATE DIMETHYLSULFONIUM NONAFLATE; POLY(4 HYDROXYSTYRENE CO 2 ETHYL 2 ADAMANTYL METHACRYLATE CO PHENYL METHACRYLATE DIMETHYLSULFONIUM NONAFLATE); POLY(4-HYDROXYSTYRENE-CO-2-ETHYL-2-ADAMANTYL METHACRYLATE-CO-PHENYL METHACRYLATE DIMETHYLSULFONIUM NONAFLATE); POLYMER; POLYMETHACRYLIC ACID DERIVATIVE; SULFONIUM DERIVATIVE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL MODEL; CHEMISTRY; LIGHT; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PHOTOCHEMISTRY; PRINTING; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; ULTRAVIOLET RADIATION;

ACRYLATES; ANIONS; LIGHT; MATERIALS TESTING; METHACRYLATES; MICROSCOPY, ATOMIC FORCE; MICROSCOPY, ELECTRON, SCANNING; MODELS, CHEMICAL; NANOTECHNOLOGY; PHOTOCHEMISTRY; POLYMERS; POLYMETHACRYLIC ACIDS; PRINTING; SULFONIUM COMPOUNDS; SURFACE PROPERTIES; ULTRAVIOLET RAYS;

EID: 27744473875     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2005.174     Document Type: Article

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