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Volumn 6520, Issue PART 1, 2007, Pages

Dark field Double Dipole Lithography (DDL) for back-end-of-line processes

Author keywords

Double dipole lithography; Double exposure; EMF bias; Lithography; Microlithography; Resolution enhancement techniques

Indexed keywords

DOUBLE DIPOLE LITHOGRAPHY; DOUBLE EXPOSURE; EMF BIAS; RESOLUTION ENHANCEMENT TECHNIQUES;

EID: 35148856243     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.713277     Document Type: Conference Paper
Times cited : (17)

References (8)
  • 1
    • 35148838436 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors
    • "International Technology Roadmap for Semiconductors, Lithography update 2006." http://www.itrs.net/-Links/2006Update/FinalToPost/ 08_Lithography2006Update.pdf.
    • (2006) Lithography update
  • 2
    • 0010511790 scopus 로고    scopus 로고
    • A. K. Wong, R. A. Ferguson, L. W. Liebmann, S. M. Mansfield, A. F. Molless, and M. O. Neisser, Lithographic effects of mask critical dimension error, 3334 of Proc. SPIE, p. 106, 1998.
    • A. K. Wong, R. A. Ferguson, L. W. Liebmann, S. M. Mansfield, A. F. Molless, and M. O. Neisser, "Lithographic effects of mask critical dimension error," vol. 3334 of Proc. SPIE, p. 106, 1998.
  • 5
    • 33748075152 scopus 로고    scopus 로고
    • Dark field Double Dipole Lithography (DDL) for 45 nm node and beyond
    • M. Hoga, ed, SPIE
    • S. Hsu, M. Burkhardt, J. Park, and D. Van Den Broeke, "Dark field Double Dipole Lithography (DDL) for 45 nm node and beyond," in Proc. SPIE (M. Hoga, ed.), vol. 6283, SPIE, 2006.
    • (2006) Proc. SPIE , vol.6283
    • Hsu, S.1    Burkhardt, M.2    Park, J.3    Van Den Broeke, D.4
  • 6
    • 0036410439 scopus 로고    scopus 로고
    • Through pitch correction of scattering effects in 193 nm alternating phase shift masks
    • A. Yen, ed
    • M. Burkhardt, R. Gordon, M. Hibbs, and T. A. Brunner, "Through pitch correction of scattering effects in 193 nm alternating phase shift masks," in Proc. SPIE (A. Yen, ed.), vol. 4691, p. 348, 2002.
    • (2002) Proc. SPIE , vol.4691 , pp. 348
    • Burkhardt, M.1    Gordon, R.2    Hibbs, M.3    Brunner, T.A.4
  • 8
    • 25144466441 scopus 로고    scopus 로고
    • Lithography manufacturing implementation for 65 nm and 45 nm nodes with model-based scattering bars using IML technology
    • B. W. Smith, ed
    • M. Hsu, D. Van Den Broeke, T. Laidig, K. E. Wampler, U. Hollerbach, R. Socha, J. F. Chen, S. Hsu, and X. Shi, "Lithography manufacturing implementation for 65 nm and 45 nm nodes with model-based scattering bars using IML technology," in Proc. SPIE (B. W. Smith, ed.), vol. 5754, pp. 355-367, 2004.
    • (2004) Proc. SPIE , vol.5754 , pp. 355-367
    • Hsu, M.1    Van Den Broeke, D.2    Laidig, T.3    Wampler, K.E.4    Hollerbach, U.5    Socha, R.6    Chen, J.F.7    Hsu, S.8    Shi, X.9


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.