EUV source requirements for EUV lithography

EUV Sources for Lithography

Volumn , Issue , 2006, Pages 27-43

  Ota, Kazuya ^a   Watanabe, Yutaka ^b   Banine, Vadim ^c   Franken, Hans ^c  

^a NIKON CORPORATION   (Japan)

^b CANON INC   (Japan)

^c ASML   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT SOURCES;

EUV SOURCE;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 84960260839     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1117/3.613774.Ch2     Document Type: Chapter

References (14)

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3. A. Endo, T. Abe, T. Suganuma, et al., "Laser-produced-plasma light sourcedevelopment for EUV lithography at EUVA, " 2nd International EUVL Symposium, Antwerp, Belgium (September 2003). Proceedings available atwww.sematech.org.
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7. W. Partlo, I. Fomenkov, and D. Birx, "EUV (13.5 nm) light generation using adense plasma focus device, " Proc. SPIE 3676, 846-858 (1999).
8. V. Banine, J. Benschop, M. Leenders, and R. Moors, "Relationship betweenan EUV source and the performance of an EUV lithographic system, " Proc.SPIE 3997, 126-136 (2000).
9. R. Stuik, E. Louis, A. Yakshin, et al., "Peak and integrated reflectivity, wavelengthand gamma optimization of Mo/Si and Mo/Be multi-layer, multielementoptics for extreme ultraviolet lithography, " J. Vac. Sci. Technol. B 17(6), 2998-3002 (1999).
10. V. Banine and R. Moors, "Plasma sources for EUV lithography exposuretools, " J. Phys. D: Appl. Phys. 37, 3207-3212 (2004).
11. Center for X-Ray Optics, LBNL, "X-Ray Interactions With Matter, "http://www-cxro.lbl.gov/optical_constants.
12. V. Y. Banine, J. P. H. Benschop, and H. G. C. Werij, "Comparison of extremeultraviolet sources for lithography applications, " Microelec. Eng. 53, 681-684 (2000).
13. K. Ota, K. Tanaka, and H. Kondo, "Throughput model consideration and impactof throughput improvement request on exposure tool, " 2nd InternationalEUVL Symposium, Antwerp, Belgium (September 2003). Proceedings availableat www.sematech.org.
14. W. H. Steel, "Luminosity, throughput, or etendue?" Appl. Opt. 13, 704 (1974).