Ion beam deposition for defect-free EUVL mask blanks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6921, Issue , 2008, Pages

  Kearney, Patrick ^a   Lin, C C ^a   Sugiyama, Takashi ^b   Jeon, Chan Uk ^a   Randive, Rajul ^b   Reiss, Ira ^b   Rajan, Renga ^b   Mirkarimi, Paul ^b   Spiller, Eberhard ^b  

^a SEMATECH   (United States)

^b VEECO INSTRUMENTS INC   (United States)

Author keywords

Defect smoothing; EUV; EUVL; Ion beam deposition; Ion beam etch; Mask defects

Indexed keywords

DEFECT FREE MASK; DEFECT SMOOTHING; DEFECT-FREE; EUV; EUV MASK; EUV MASK BLANKS; EUVL MASK BLANKS; EXTREME ULTRAVIOLET; IN-SITU; ION BEAM DEPOSITION; MASK BLANK DEVELOPMENT CENTERS; MASK DEFECTS; MASK SUBSTRATES; MULTILAYER DEPOSITION PROCESS; MULTILAYER DEPOSITIONS; PLANARIZATION PROCESS; PRIMARY SOURCES; SEMATECH; SMOOTHING PROCESS; SUBSTRATE DEFECTS;

BEAM PLASMA INTERACTIONS; CHEMICAL MODIFICATION; EXTREME ULTRAVIOLET LITHOGRAPHY; ION BEAMS; ION BOMBARDMENT; IONS; MULTILAYERS; PHOTOMASKS;

DEFECTS;

EID: 67149145910     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.774505     Document Type: Conference Paper

References (2)

1. Hau-Rige et al. JVSTB 21(6) Nov/Dec 2003.
2. Mirkarimi, et al. EUV Symposium, San Diego, (2005).