Resonantly enhanced selective photochemical etching of GaN

Applied Physics Letters

Volumn 94, Issue 17, 2009, Pages

  Trichas, E ^a,b   Kayambaki, M ^b   Iliopoulos, E ^a,b   Pelekanos, N T ^a,b   Savvidis, P G ^a,b  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN FILMS; ETCHING RATES; EXCITATION CONDITIONS; EXCITONIC ABSORPTIONS; GAN FILMS; PHOTO CHEMICAL ETCHINGS; RESONANT ENHANCEMENTS; SELECTIVE ETCHINGS;

ETCHING; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 65449159793     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3122932     Document Type: Article

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