On application of electrochemical capacitance-voltage profiling technique for n-type SiC

Semiconductor Science and Technology

Volumn 23, Issue 7, 2008, Pages

  Mynbaeva, M ^a   Kayambaki, M ^b   Mynbaev, K ^a   Zekentes, K ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DISSOLUTION; ELECTROLYTES; PASSIVATION;

ANODIC FILMS; ELECTROCHEMICAL CAPACITANCE-VOLTAGE; ELECTROCHEMICAL CAPACITANCE-VOLTAGE (ECV) PROFILING; ETCHED SURFACES; ETCHING METHOD; ROOM-TEMPERATURE (RT); SIDE EFFECTS; SURFACE ROUGHENING;

SILICON CARBIDE;

EID: 47749089377     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/7/075039     Document Type: Article

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