Optical cavity formation on GaN using a conventional RIE system

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1798-1802

  Kalaitzakis, F G ^a,b   Konstantinidis, G ^b   Tsagaraki, K ^b   Androulidaki, M ^b   Pelekanos, N T ^a,b  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

LITHOGRAPHY; MASKS; PHOTORESISTORS; PLASMA ETCHING; LASER MIRRORS; PHOTORESISTS;

LASER STRUCTURES; MATERIAL PROTECTION; PHOTORESIST LAYER; RIE SYSTEM; 42.55.PX; 81.65.CF; ETCH MASK; ETCHED SIDEWALLS; GAN-BASED LASERS; OPTICAL CAVITIES; PHOTORESIST LAYERS;

GALLIUM NITRIDE;

EID: 33746324814     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565281     Document Type: Conference Paper

References (5)

1. Y. H. Im, J. S. Park, Y. B. Hahn, K. S. Nahm, Y.-S. Lee, B. C. Cho, K. Y. Lim, H. J. Lee, and S. J. Pearton, J. Vac. Sci. Technol. A 18(5), 2169 (2000).
2. J. W. Lee, C. B. Vartuli, C. R. Abernathy, J. D. Mackenzie, J. R. Mileham, S. J. Pearton, R. J. Shul, J. C. Zolper, M. Hagerott-Crawford, J. M. Zavada, R. G. Wilson, and R. N. Schwarte, J. Vac. Sci. Technol. B 14(6), 3637 (1996).
3. X. A. Cao, H. Cho, S. J. Pearton, G. T. Dang, A. P. Zhang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, Appl. Phys. Lett. 75, 232 (1999).
4. I. Vurgaftman and J. Singh, Appl. Phys. Lett. 66, 1056 (1994).
5. E. Dimakis, A. Georgakilas, M. Androulidaki, K. Tsagaraki, G. Kittler, F. Kalaitzakis, D. Cengher, E. Bellet-Amalric, D. Jalabert, and N. T. Pelekanos, J. Cryst. Growth 251,476 (2003).