Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 4039-4042

  Kim, Han Ki ^a   Yi, Min Su ^b   Lee, Sung Nam ^c  

^a Kyung Hee University   (South Korea)

^b Kyungpook National University   (South Korea)

^c Silla University   (South Korea)

Author keywords

AES depth profile; Ag ZIO; Ohmic contact; p GaN; Specific contact resistivity

Indexed keywords

AES DEPTH PROFILE; AG/ZIO; ANNEALED SAMPLES; ELECTRICAL PROPERTIES; FACING TARGET SPUTTERING; HIGH TRANSPARENCIES; I-V CHARACTERISTICS; LOW RESISTANCES; OPTICAL CHARACTERISTICS; P-GAN; P-TYPE GAN; RECTIFYING BEHAVIORS; SPECIFIC CONTACT RESISTIVITY; SYNCHROTRON X-RAY SCATTERINGS;

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DEPTH PROFILING; DISTILLATION; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; OHMIC CONTACTS; SCATTERING; SEMICONDUCTING GALLIUM; SILVER; THERMAL EVAPORATION;

ELECTRIC CONTACTORS;

EID: 65449153897     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.148     Document Type: Article

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