Temperature dependence of leakage currents in Ti-doped Ta2O 5 films on nitrided silicon

Journal of Physics D: Applied Physics

Volumn 42, Issue 9, 2009, Pages

  Skeparovski, A ^a   Novkovski, N ^a   Atanassova, E ^b   Spassov, D ^b   Paskaleva, A ^b  

^a SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

BULK DOPING; CONDUCTION BAND EDGES; CONDUCTION MECHANISMS; CONDUCTION PROCESS; DOPED FILMS; ELECTRICALLY ACTIVE DEFECTS; I - V CURVES; I-V CHARACTERISTICS; POOLE-FRENKEL EFFECTS; SHALLOW TRAPS; SILICON SUBSTRATES; SURFACE DOPING; TEMPERATURE DEPENDENCES; TEMPERATURE DEPENDENTS; TEMPERATURE RANGES; TI DOPED; TI INCORPORATIONS; TWO LAYERS;

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; TANTALUM; TITANIUM;

DOPING (ADDITIVES);

EID: 65449132095     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/9/095302     Document Type: Article

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