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Volumn 254, Issue 18, 2008, Pages 5879-5885

Effect of Ti doping on Ta 2 O 5 stacks with Ru and Al gates

Author keywords

DRAM; Metal high k dielectric stacks; Ta 2 O 5; ToF SIMS

Indexed keywords

ALUMINUM; DOPING (ADDITIVES); GATES (TRANSISTOR); PERMITTIVITY; RUTHENIUM; TITANIUM;

EID: 44349098507     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.03.076     Document Type: Article
Times cited : (19)

References (26)
  • 1
    • 44349136362 scopus 로고    scopus 로고
    • The Intern. Techn. Roadmap Semicond., (ITRS) 2006 (ed), http://public.itrs.net.
    • The Intern. Techn. Roadmap Semicond., (ITRS) 2006 (ed), http://public.itrs.net.
  • 24
    • 44349155415 scopus 로고    scopus 로고
    • E. Atanassova, D. Spassov, A. Paskaleva, M. Georgieva, J. Koprinarova, Thin Solid Films, in press.
    • E. Atanassova, D. Spassov, A. Paskaleva, M. Georgieva, J. Koprinarova, Thin Solid Films, in press.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.