Electrical levels of defect investigation of Zr O2 thin film by spectroscopic ellipsometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 3, 2009, Pages 1030-1034

  Chen, Y R ^a   Zhou, P ^a   Li, J ^a   Chen, L Y ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED DEFECTS; DEFECT STATE; DENSITY FUNCTIONAL; ENERGY LEVELS; HIGH - K DIELECTRICS; INTERSTITIAL OXYGENS; LORENTZ OSCILLATOR MODELS; NON-DESTRUCTIVE; NONCONTACT; OXYGEN FLUXES; TRANSITION ENERGIES; VACANCY DEFECTS; X- RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; ELECTRON AFFINITY; ELECTRON MOBILITY; OPTICAL PROPERTIES; OXYGEN; SPECTROSCOPIC ELLIPSOMETRY; VACANCIES; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM;

OXYGEN VACANCIES;

EID: 65249114272     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3112652     Document Type: Article

References (18)

1. M. T. Bohr, R. S. Chau, T. Ghani, and K. Mistry, IEEE Spectrum 44, 29 (2007).
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
3. C. Chanelierea, J. L. Autrana, R. A. B. Devineb, and B. Balland, Mater. Sci. Eng. R. 22, 269 (1998).
4. D. Park, Y.-C. King, Q. Lu, T.-J. King, C. Hu, A. Kalnitsky, S.-P. Tay, and C.-C. Cheng, IEEE Electron Device Lett. 19, 441 (1998).
5. S. A. Campbell, H.-S. Kim, D. C. Gilmer, B. He, T. Ma, and W. L. Gladfelter, IBM J. Res. Dev. 43, 383 (1999).
6. C.-S. Kuo, J.-F. Hsu, S.-W. Huang, L.-S. Lee, M.-J. Tsai, and J.-G. Hwu, IEEE Trans. Electron Devices 51, 854 (2004).
7. M. Gutowski, J. E. Jaffe, R. I. Hegde, R. S. Rai, and P. J. Tobin, Appl. Phys. Lett. 80, 1897 (2002).
8. E. P. Gusev, C. Cabral, Jr., M. Copel, C. D'Emic, and M. Gribelyuk, Microelectron. Eng. 69, 145 (2003).
9. R. B. van Dover, L. F. Schneemeyer, and R. M. Fleming, Nature (London) 392, 162 (1998).
10. J. P. Han and T. P. Ma, Appl. Phys. Lett. 71, 1267 (1997).
11. D. E. Kotecki, IBM J. Res. Dev. 43, 367 (1999).
12. M. A. Quevedo-Lopez, M. El-Bouanani, B. E. Gnade, R. M. Wallace, M. R. Visokay, M. Douglas, M. J. Bevan, and L. Colombo, J. Appl. Phys. 92, 3540 (2002).
13. C. Y. Ma, F. Lapostolle, P. Briois, and Q. Y. Zhang, Appl. Surf. Sci. 253, 8718 (2007).
14. A. S. Foster, V. B. Sulimov, F. Lopez Gejo, A. L. Shluger, and R. M. Nieminen, Phys. Rev. B 64, 224108 (2001).
15. L. Y. Chen, X. W. Feng, Y. Su, H. Z. Ma, and Y. H. Qian, Appl. Opt. 33, 1299 (1994).
16. G. Q. Yu, B. K. Tay, and Z. W. Zhao, Appl. Phys. A: Mater. Sci. Process. 81, 405 (2005).
17. D. Majumdar and D. Chatterjee, J. Appl. Phys. 70, 988 (1991).
18. M. S. Wong, W. J. Chia, P. Yashar, J. M. Schneider, W. D. Sproul, and S. A. Barnett, Surf. Coat. Technol. 86-87, 381 (1996).