Transfer characteristics and bias-stress stability of amorphous indium zinc oxide thin-film transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 2, 2009, Pages 622-625

  Choi, Jun Hyuk ^a   Han, Un Bin ^a   Lee, Ki Chang ^a   Lee, Joon Hyung ^a   Kim, Jeong Joo ^a   Cho, In Tak ^a   Lee, Jong Ho ^a   Heo, Young Woo ^a  

^a Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYERS; BOTTOM GATES; ENHANCEMENT MODES; EXPONENTIAL TIME; FIELD-EFFECT MOBILITIES; GATE-BIAS STRESS; INDIUM ZINC OXIDES; ON/OFF RATIOS; PINCH OFFS; POSITIVE GATE BIAS; RF- MAGNETRON SPUTTERING; ROOM TEMPERATURES; STRESS STABILITIES; SUB THRESHOLD SLOPES; THRESHOLD VOLTAGE SHIFTS; TIME DEPENDENCES; TRANSFER CHARACTERISTICS;

SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC; ZINC OXIDE;

INDIUM;

EID: 64549136743     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3097852     Document Type: Article

References (24)

1. E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, and R. Martins, Thin Solid Films 487, 205 (2005).
2. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 89, 112123 (2006).
3. A. Suresh, P. Wellenius, A. Dhawan, and J. F. Muth, Appl. Phys. Lett. 90, 123512 (2007).
4. E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Goņalves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins, Adv. Mater. (Weinheim, Ger.) 17, 590 (2005).
5. Y. Kwon, Y. Li, Y. W. Heo, M. Jones, P. H. Holloway, D. P. Norton, Z. V. Park, and S. Li, Appl. Phys. Lett. 84, 2685 (2004).
6. Y. W. Heo, B. S. Kang, L. C. Tien, Y. Kwon, D. P. Norton, F. Ren, and S. J. Pearton, Appl. Phys. Lett. 85, 2274 (2004).
7. Hsing-Hung Hsieh and Chung-Chih Wu, Appl. Phys. Lett. 89, 041109 (2006).
8. J. Siddiqui, E. Cagin, D. Chen, and J. D. Phillips, Appl. Phys. Lett. 88, 212903 (2006).
9. P. F. Carcia, R. S. McLean, and M. H. Reilly, Appl. Phys. Lett. 88, 123509 (2006).
10. S. Sasa, M. Ozaki, K. Koike, M. Yano, and Masataka Inoue, Appl. Phys. Lett. 89, 053502 (2006).
11. H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler, Appl. Phys. Lett. 86, 013503 (2005).
12. B. Yaglioglu, H. Y. Yeom, R. Beresford, and D. C. Paine, Appl. Phys. Lett. 89, 062103 (2006).
13. N. L. Dehuff, E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C. H. Park, and D. A. Keszler, J. Appl. Phys. 97, 064505 (2005).
14. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 432, 488 (2004).
15. Jin-Seong Park, Jae Kyeong Jeong, Hyun-Joong Chung, Yeon-Gon Mo, and Hye Dong Kim, Appl. Phys. Lett. 92, 072104 (2008).
16. Keun-Young Son, Dong-Hyuk Park, Joon-Hyung Lee, Jeong-Joo Kim, and Jai-Sung Lee, Solid State Ionics 172, 425 (2004).
17. N. S. Sakes and A. K. Agarwal, Appl. Phys. Lett. 77, 3281 (2000).
18. D. Kawakami, Y. Yasutake, H. Nisshizawa, and Y. Majima, Jpn. J. Appl. Phys., Part 2 45, L1127 (2006).
19. C.-Y. Huang, J.-W. Tsai, T.-H. Teng, C.-J. Yang, and H.-C. Cheng, Jpn. J. Appl. Phys., Part 1 39, 5763 (2000).
20. K. S. Karim, A. Nathan, M. Hack, and W. I. Milne, IEEE Electron Device Lett. 25, 188 (2004).
21. A. Suresh and J. F. Muth, Appl. Phys. Lett. 92, 033502 (2008).
22. Jeong-Min Lee, In-Tak Cho, Jong-Ho Lee, and Hyuck-In Kwon, Appl. Phys. Lett. 93, 093504 (2008).
23. F. R. Libsch and J. Kanichi, Appl. Phys. Lett. 62, 1286 (1993).
24. S. G. J. Mathijssen, M. Cölle, H. Gomes, E. C. P. Smits, B. de Boer, I. McCulloch, P. A. Bobbert, and D. M. de Leeuw, Adv. Mater. (Weinheim, Ger.) 19, 2785 (2007).