Turnaround phenomenon of threshold voltage shifts in amorphous silicon thin film transistors under negative bias stress

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 10, 2000, Pages 5763-5766

  Huang, Chun Yao ^a   Tsai, Jun Wei ^a   Teng, Teh Hung ^a   Yang, Cheng Jer ^a   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); SILICON NITRIDE; THRESHOLD VOLTAGE;

BIAS STRESS; DEFECT DENSITY; ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY; THRESHOLD VOLTAGE SHIFTS; TURNAROUND PHENOMENON;

THIN FILM TRANSISTORS;

EID: 0034290827     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5763     Document Type: Article

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