A review of metrology for nanoelectronics

IEEE Transactions on Semiconductor Manufacturing

Volumn 20, Issue 4, 2007, Pages 542-548

  Galatsis, Kosmas ^a   Potok, Ron ^b   Wang, Kang L ^a  

^a University of California   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEYOND CMOS; CALIFORNIA INSTITUTE OF TECHNOLOGIES; FOCUS CENTER RESEARCH PROGRAMS; HOLOGRAPHIC IMAGING; MICROSCOPY TECHNIQUES; NANOSCALE LEVELS; NANOSCALE SCIENCE AND ENGINEERINGS; NATIONAL SCIENCE FOUNDATIONS; PROBING TECHNIQUES;

ENGINEERING RESEARCH; NANOELECTRONICS; NANOSTRUCTURED MATERIALS;

MEASUREMENTS;

EID: 64149102358     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2007.907631     Document Type: Review

References (39)

1. J. D. Meindl and J. A. Davis, "The fundamental limit on binary switching energy for terascale integration (TSI)," IEEE J. Solid-State Circuits, vol. 35, no. 10, pp. 1515-1516, Oct. 2000.
2. R. M. Swanson and J. D. Meindl, "Ion-implanted complementary MOS transistors in low-voltage circuits," IEEE J. Solid-State Circuits, vol. SC-7, no. 1, pp. 146-153, Jan. 1972.
3. in Proc.Workshop Metrology Beyond CMOS., San Francisco, CA, Dec. 14th, 2006.
4. in International Technology Roadmap for Semiconductors, 2006, Metrology Chapter [Online]. Available: http://public.itrs.net/Reports. htm
5. K. K. Likharev, "Electronics below 10 nm," in Nano and Giga Challenges in Microelectronics. Amsterdam, The Netherlands: Elsevier, 2003, pp. 27-68.
6. B. Obradovic, R. Kotlyar, F. Heinz, P. Matagne, T. Rakshit, M. D. Giles, M. A. Stettler, and D. E. Nikonov, "Analysis of graphene nanoribbons as a channel material for field-effect transistors," Appl. Phys. Lett., vol. 88, p. 142102, 2006.
7. M. Nawate, N. Nishimura, S. Honda, and H. Tanaka, "Ab initio calculation for magnetism of Pd nanoparticles," IEEE Trans. Magn., vol. 41, no. 10, pp. 3424-3427, Oct. 2005.
8. X. Zhao, C. M.Wei, L. Yang, and M. Y. Chou, "Quantum confinement and electronic properties of silicon nanowires," Phys. Rev. Lett., vol. 92, p. 236805, 2004.
9. A. C. Diebold, Handbook of Silicon Semiconductor Metrology. New York: Marcel Dekker, 2001.
10. G. Binnig, C. F. Quate, and C. Gerber, "Atomic force microscope," Phys. Rev. Lett., vol. 56, pp. 930-933, 1986.
11. Y. D. Wilde, F. Formanek, R. Carminati, B. Gralak, P.-A. Lemoine, K. Joulain, J.-P. Mulet, Y. Chen, and J.-J. Greffet, Thermal Radiation Scanning Tunnelling Microscopy, vol. 444, pp. 740-743, 2006.
12. C. C. Schmitt, J. R. Elings, and M. Serry, "Veeco: Nanoindenting, scratching, and wear testing with the atomic force microscope," Veeco, 2004.
13. O. Sahin, C. F. Quate, O. Solgaard, and A. Atalar, "Resonant harmonic response in tapping-mode atomic force microscopy," Phys. Rev. B (Condensed Matter Mater. Phys.), vol. 69, p. 165416, 2004.
14. R. Tokura, "Correlated-Electron physics in transition-metal oxides," Phys. Today, vol. 56, pp. 50-55, 2003.
15. A. Scholl, J. Stöhr, J. Lüning, J. W. Seo, J. Fompeyrine, H. Siegwart, J.-P. Locquet, F. Nolting, S. Anders, E. E. Fullerton, M. R. Scheinfein, and H. A. Padmore, "Observation of antiferromagnetic domains in epitaxial thin films," Science, vol. 287, pp. 1014-1016, 2000.
16. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, "Epitaxial BiFeO3 multiferroic thin film heterostructures," Science, vol. 299, pp. 1719-1722, 2003.
17. H.Yamada, Y. Ogawa, Y. Ishii, H. Sato, M. Kawasaki, H. Akoh, and Y. Tokura, "Engineered interface of magnetic oxides," Science, vol. 305, pp. 646-648, 2004.
18. C. F. Hirjibehedin, C. P. Lutz, and A. J. Heinrich, "Spin coupling in engineered atomic structures," Science, vol. 312, 2006.
19. E. Y. Tsymbal and H. Kohlstedt, "Applied physics: Tunneling across a ferroelectric," Science, vol. 313, pp. 181-183, 2006.
20. H. Y. Hwang, "Applied physics: Tuning interface states," Science, vol. 313, pp. 1895-1896, 2006.
21. A. Gruverman and S. V. Kalinin, "Piezoresponseforce microscopy and recent advances in nanoscale studies of ferroelectrics," J. Mater. Sci., vol. 41, pp. 107-116, 2006.
22. S. Jesse, B. Mirman, and S. V. Kalinin, "Resonance enhancement in piezo response force microscopy: Mapping electromechanical activity, contact stiffness, and Q factor," Appl. Phys. Lett., vol. 89, p. 22906-1, 2006.
23. S. V. Kalinin, B. J. Rodriguez, S. Jesse, S. Junsoo, A. P.Baddorf, P. Gupta, H. Jain, D. B. Williams, and A. Gruverman, "Vector piezo response force microscopy," Microscopy Microanal., vol. 12, pp. 206-220, 2006.
24. S. V. Kalinin, E. A. Eliseev, and A. N. Morozovska, "Materials contrast in piezo response force microscopy," Appl. Phys. Lett., vol. 88, p. 232904, 2006.
25. C. Israel, C. Hyun, A. d. Lozanne, S. Phark, and Z. G.Khim, "Compact variable-temperature magnetic force microscope with optical access and lateral cantilever positioning," Rev. Scientific Instruments, vol. 77, p. 023704, 2006.
26. L. Zhang, C. Israel, A. Biswas, R. L. Greene, and A. de Lozanne, "Direct observation of percolation in a manganite thin film," Science, vol. 298, pp. 805-807, 2002.
27. W. Wu, C. Israel, N. Hur, S. Park, S.-W. Cheong, and A. de Lozanne, "Magnetic imaging supercooling glass transition in a weakly disordered ferromagnet," Nature Mater., vol. 5, pp. 881-886, 2006.
28. W. Chao, B. D. Harteneck, J. A. Liddle, E. H. Anderson, and D. T. Attwood, "Soft x-ray microscopy at a spatial resolution better than 15 nm," Nature, vol. 435, pp. 1210-1213, Jun. 2005.
29. M. A. Pfeifer, G. J. Williarns, I. A. Vartanyants, R. Harder, and I. K. Robinson, "Three-dimensional mapping of a deformation field inside a nanocrystal," Nature, vol. 442, pp. 63-66, 2006.
30. G. Schneider, G. Denbeaux, E. H. Anderson, B. Bates, A. Pearson, M. A. Meyer, E. Zschech, D. Hambach, and E. A. Stach, "Dynamical x-ray microscopy investigation of electromigration in passivated inlaid Cu interconnect structures," Appl. Phys. Lett., vol. 81, pp. 2535-2537, 2002.
31. D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, and G. Timp, "Electronic structure at the atomic scale of ultrathin gate oxides," Nature, vol. 399, no. 6738, pp. 758-761, 1999.
32. D. A. Muller, N. Nakagawa, A. Ohtomo, J. L. Grazul, and H. Hwang, "Atomic-Scale imaging of nanoengineered oxygen vacancyprofiles in SrTiO3," Nature, vol. 430, pp. 657-661, Aug. 2004.
33. P. Ercius, M.Weyland, D. A. Muller, and L. M. Gignac, "Three-dimensional imaging of nano voids in copper interconnects using incoherent bright field tomography," Appl. Phys. Lett., vol. 88, p. 243116, 2006.
34. R. Henderson, Quart. Rev. Biophysics, vol. 28, pp. 171-193.
35. G. S. Shekhawat and V. P. Dravid, "Nanoscale imaging of buried structures via scanning near-field ultrasound holography," Science, vol. 310, pp. 89-92, 2005.
36. B. R. Goldsmith, J. G. Coroneus, V. R. Khalap, A. A. Kane, G. A. Weiss, and P. G. Collins, "Conductance-controlled point functionalization of single-walled carbon nanotubes," Science, vol. 315, pp. 77-81, 2007.
37. F.Yuwei, B. R. Goldsmith, and P. G. Collins, "Identifying and counting point defects in carbon nanotubes," NatureMater., vol. 4, pp. 906-911, 2005.
38. C. Tamerler, M. Duman, E. E. Oren, M. Gungormus, X. R. Xiong, T. Kacar, B. A. Parviz, and M. Sarikaya, "Materials specificity and directed assembly of a gold-binding peptide," Small, vol. 2, pp. 1372-1378, 2006.
39. H. Yu, C. Chung-Yi, L. S. Kwan, G. Yan, E. L. Hu, J. De Yoreo, and A. M. Belcher, "Programmable assembly of nanoarchitectures using genetically engineered viruses," Nano Lett., vol. 5, pp. 1429-1434, 2005.