Dynamical x-ray microscopy investigation of electromigration in passivated inlaid Cu interconnect structures

Applied Physics Letters

Volumn 81, Issue 14, 2002, Pages 2535-2537

  Schneider, G ^a   Denbeaux, G ^a   Anderson, E H ^a   Bates, B ^a   Pearson, A ^a   Meyer, M A ^b   Zschech, E ^b   Hambach, D ^c   Stach, E A ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b IBM MICROELECTRONICS   (United States)

^c UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CU INTERCONNECT; CU LINES; DYNAMIC PROCESS; HIGH VOLTAGE; IMAGE SEQUENCE; LATERAL RESOLUTION; REAL TIME; TIME-RESOLVED; VOID FORMATION; VOID NUCLEATION; X RAY MICROSCOPY;

ELECTROMIGRATION; GRAIN BOUNDARIES; X RAYS;

X RAY MICROSCOPES;

EID: 79955983387     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509465     Document Type: Article

References (8)

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