Tuning interface states

Science

Volumn 313, Issue 5795, 2006, Pages 1895-1896

  Hwang, Harold Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; MATERIALS SCIENCE; PRECISION ENGINEERING;

ATOMIC PRECISION; INTERFACE STATES;

INTERFACES (MATERIALS);

ELECTROMAGNETIC FIELD; INTERFACE; PRECISION;

CONDUCTANCE; DENSITY; ELECTRIC POTENTIAL; MAGNETISM; NUCLEAR PHYSICS; PRIORITY JOURNAL; REVIEW; ROOM TEMPERATURE; SEMICONDUCTOR;

EID: 33749337809     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1133138     Document Type: Review

References (11)

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7. An alternative scenario is a different kind of reconstruction at short length scales, perhaps via charge transfer from the interface to the surface; these distinctions are not yet experimentally established.
8. M. Huijben et al., Nat. Mater. 5, 556 (2006).
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