Determination of microdistortion components and their application to structural characterization of HVPE GaN epitaxial layers

Journal of Physics D: Applied Physics

Volumn 34, Issue 10 SPEC. ISS. A, 2001, Pages

  Ratnikov, V V ^a   Kyutt, R N ^a   Shubina, T V ^a   Paskova, T ^b   Monemar, B ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TENSORS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

HYDRIDE VAPOUR PHASE EPITAXY (HVPE); MICRODISTORTION TENSOR;

SEMICONDUCTING FILMS;

EID: 0035926593     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/10a/307     Document Type: Article

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