Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire

Semiconductors

Volumn 40, Issue 9, 2006, Pages 1060-1065

  Klad'ko, V P ^a   Chornen'kii, S V ^a   Naumov, A V ^a   Komarov, A V ^b   Tacano, M ^c   Sveshnikov, Yu N ^d   Vitusevich, S A ^a   Belyaev, A E ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b INSTITUTE OF PHYSICS   (Ukraine)

^c MEISEI UNIVERSITY   (Japan)

^d Close Corporation Elma Malakhit   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33748801037     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782606090132     Document Type: Article

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