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Volumn 274, Issue 3-4, 2005, Pages 412-417

Room temperature chemical vapor deposition of c-axis ZnO

(4) Barnes, Teresa M a Leaf, Jacquelyn a Fry, Cassandra a Wolden, Colin A a

a Department of Metallurgical and Materials Engineering (United States)

Author keywords

A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Oxides; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

ACTIVATION ENERGY; DEPOSITION; FILM GROWTH; GLASS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDES; SILICON; SUBSTRATES; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; ZINC COMPOUNDS;

HIGH VACUUM PLASMAS (HVP); OPTICAL TRANSPARENCY; ROOM TEMPERATURE (RT); SEMICONDUCTING II-VI MATERIALS;

ZINC OXIDE;

EID: 12244275706 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.10.015 Document Type: Article

Times cited : (115)

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