Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants

Semiconductor Science and Technology

Volumn 18, Issue 9, 2003, Pages 839-844

  Nejim, A ^a   Sealy, B J ^b  

^a Silvaco Data Systems Inc   (United States)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

TRANSIENT ENHANCED DIFFUSION (TED);

DIFFUSION IN SOLIDS;

EID: 0141746007     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/9/305     Document Type: Article

References (14)

1. Int. Technology Road Map or Semiconductors (ITRS) 1999 edn Design p 43
2. Appleton B R and Celler G K (ed) 1982 MRS Symp. Proc. vol 4 (New York: North-Holland) Narayan J, Brown W L and Lemons R A (ed) 1983 MRS Symp. Proc. vol 13 (New York: North-Holland)
3. Appleton B R and Celler G K (ed) 1982 MRS Symp. Proc. vol 4 (New York: North-Holland) Narayan J, Brown W L and Lemons R A (ed) 1983 MRS Symp. Proc. vol 13 (New York: North-Holland)
4. Xu J, Roth E G, Holland O W, Mills A P Jr and Suzuki R 1999 Appl. Phys. Lett. 74 997-9
5. Nejim A and Sealy B J 2002 UK Patent No 0200879.5
6. Gartner K and Uguzzoni A 1992 Nucl. Instrum. Methods Phys. Res. B 67 189
7. Nejim A, Jeynes C, Webb R P, Cowern N E B and Patel C J 1997 Mat. Res. Soc. Symp. Proc. 469 387-93
8. Knights A P, Nejim A, Barradas N P, Gwilliam R, Coleman P G, Malik F, Kheyrandish H and Romani S 1998 Materials Research Society Symposium Proceedings Vol 532: Silicon Front-End Technology - Materials Processing and Modelling (Pittsburgh: Materials Research Society)
9. Cho K, Numan M, Finstead T G, Chu W K, Liu J and Waterman J J 1985 Appl. Phys. Lett. 47 1321-3
10. Current M I, Ohno N and Hara T 1997 Nucl. Instrum. Methods B 121 262-6
11. Giles M D, Tu S, Kennel H W and Packan P A 1998 Solid State Technol. 41 97-104
12. Caturla M J, Johnson M D and Diaz de la Rubia T 1998 Appl. Phys. Lett. 72 2736-8
13. Jain S C, Schoenmaker W, Lindsay R, Stolk P A, Decoutere S, Willander M and Maes H E 2002 J. Appl. Phys. 91 8919-41
14. Law M E and Jones K S 2000 Tech. Dig. Int. Electron Devices Meet. p 511