Diffusion and activation of ultra shallow boron implants in silicon in proximity of voids

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 357-362

  Marcelo, O ^a   Claverie, A ^a   Alquier, D ^b   Cayrel, F ^b   Lerch, W ^c   Paul, S ^c   Rubin, L ^d   Raineri, V ^e   Giannazzo, F ^e   Jaouen, H ^f  

^a CEMES CNRS   (France)

^b UNIVERSITÉ DE TOURS   (France)

^c MATTSON THERMAL PRODUCTS GMBH   (United States)

^d AXCELIS TECHNOLOGIES   (United States)

^e CMR IMM   (Italy)

^f STMICROELECTRONICS   (France)

Author keywords

Activation; Boron diffusion; Ion implantation; Ostwald ripening; Voids

Indexed keywords

ACTIVATION ENERGY; ION IMPLANTATION; OSTWALD RIPENING; THERMAL DIFFUSION; VACANCIES; CHEMICAL ACTIVATION; DEFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

BORON DIFFUSION; BORON IMPLANTS; PREREQUISITE CONDITION; B IMPLANTATION; BORON DIFFUSIONS; FLUENCES; IMPLANTED REGION; NANO-VOIDS; VOIDS;

SEMICONDUCTING SILICON; BORON;

EID: 38549144679     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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