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Volumn 810, Issue , 2004, Pages 109-114

Doping and mobility profiles in defect-engineered ultra-shallow junctions: Bulk and SOI

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION; DOPING (ADDITIVES); ERROR ANALYSIS; OXIDATION; SEMICONDUCTOR MATERIALS; SILICON WAFERS; THERMAL EFFECTS;

BURIED OXIDE (BOX); DIFFERENTIAL HALL EFFECT; DOPANTS; VACCANCY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 5544281696 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-810-c3.8 Document Type: Conference Paper

Times cited : (8)

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