Effect of voids-controlled vacancy supersaturations on B diffusion

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 249-252

  Marcelot, O ^a   Claverie, A ^a   Cristiano, F ^b   Cayrel, F ^c   Alquier, D ^c   Lerch, W ^d   Paul, S ^d   Rubin, L ^e   Jaouen, H ^f   Armand, C ^g  

^a CEMES CNRS   (France)

^b LAAS CNRS   (France)

^c UNIVERSITÉ DE TOURS   (France)

^d MATTSON THERMAL PRODUCTS GMBH   (United States)

^e AXCELIS TECHNOLOGIES   (United States)

^f STMICROELECTRONICS   (France)

^g INSA   (France)

Author keywords

Defects and impurities; Diffusion of impurities; Impurities implantation; vacancies; Voids

Indexed keywords

HELIUM; INTERDIFFUSION (SOLIDS); ION IMPLANTATION; OSTWALD RIPENING; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

EXTRINSIC DEFECTS; IMPURITIES IMPLANTATION; VACANCY SUPERSATURATIONS;

VACANCIES;

EID: 33947699771     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.01.236     Document Type: Article

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