Vacancy engineering for ultra-shallow junction formation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 261, Issue 1-2 SPEC. ISS., 2007, Pages 600-603

  Gwilliam, R ^a   Cowern, N E B ^a   Colombeau, B ^b   Sealy, B ^a   Smith, A J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Boron doping; SOI; Solid solubility; Vacancy engineering

Indexed keywords

BORON DOPING; SOLID PHASE EPITAXY; SOLID SOLUBILITY; VACANCY ENGINEERING;

AMORPHIZATION; ANNEALING; BORON; DOPING (ADDITIVES); HIGH TEMPERATURE EFFECTS; SEMICONDUCTOR JUNCTIONS; SOLUBILITY;

VACANCIES;

EID: 34447299429     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.04.048     Document Type: Article

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