Diffusion and activation of dopants in silicon and advanced silicon-based materials

Physica Scripta T

Volumn T126, Issue , 2006, Pages 89-96

  Pichler, Peter ^a,b   Ortiz, Christophe J ^a,i   Colombeau, Benjamin ^c,j   Cowern, Nicholas E B ^c   Lampin, Evelyne ^d   Uppal, Suresh ^e,k   Karunaratne, M S A ^e   Bonar, Janet M ^e   Willoughby, Arthur F W ^e   Claverie, Alain ^f   Cristiano, Filadelfo ^g   Lerch, Wilfried ^h   Paul, Silke ^h  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d Institut Superieur de l'Electronique et du Numerique   (France)

^e UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^f CEMES CNRS   (France)

^g LAAS CNRS   (France)

^h MATTSON THERMAL PRODUCTS GMBH   (United States)

ⁱ UNIVERSITY OF ALICANTE   (Spain)

^j CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^k NEWCASTLE UNIVERSITY   (United Kingdom)

more..

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; CHEMICAL ACTIVATION; CRYSTALLINE MATERIALS; GERMANIUM; ION IMPLANTATION; SEMICONDUCTOR DOPING;

BORON-INTERSTITIAL CLUSTERS; PREAMORPHIZED SILICON;

SEMICONDUCTING SILICON;

EID: 42349089206     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/2006/T126/021     Document Type: Conference Paper

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