-
8
-
-
0032021791
-
-
Sieval A B, Demirel A L, Nissink J W M, Linford M R, van der Maas J H, de Jeu W H, Zuilhof H and Sudholter E J R 1998 Langmuir 14 1759-68
-
(1998)
Langmuir
, vol.14
, Issue.7
, pp. 1759-1768
-
-
Sieval, A.B.1
Demirel, A.L.2
Nissink, J.W.M.3
Linford, M.R.4
Van Der Maas, J.H.5
De Jeu, W.H.6
Zuilhof, H.7
Sudholter, E.J.R.8
-
9
-
-
0036589258
-
-
Buriak J M 2002 Chem. Rev. 102 1271-308
-
(2002)
Chem. Rev.
, vol.102
, Issue.5
, pp. 1271-1308
-
-
Buriak, J.M.1
-
10
-
-
34249868458
-
A silicon structure for electrical characterization of nanoscale elements
-
Sazio P J A, Berg J, See P, Ford C J B, Lundgren P, Greenham N C, Ginger D S, Bengtsson S and Chin S N 2001 A silicon structure for electrical characterization of nanoscale elements Symposium B: Molecular and Biomolecular Electronics: MRS Spring Meeting (San Francisco, USA) vol 679E ed A Christou, E A Chandross, W M Tolles and S Tolbert p B2.3
-
(2001)
Symposium B: Molecular and Biomolecular Electronics: MRS Spring Meeting
, vol.679
, pp. 23
-
-
Sazio, P.J.A.1
Berg, J.2
See, P.3
Ford, C.J.B.4
Lundgren, P.5
Greenham, N.C.6
Ginger, D.S.7
Bengtsson, S.8
Chin, S.N.9
Christou, A.10
Chandross, E.A.11
Tolles, W.M.12
Tolbert, S.13
-
11
-
-
25444493232
-
A silicon-oxide-silicon nanogap device structure
-
Lundgren P and Bengtsson S 2002 A silicon-oxide-silicon nanogap device structure Proc. Conf. 2nd IEEE-NANO 2002 (Washington DC, USA, 26-28 Aug. 2002) pp 201-3
-
(2002)
Proc. Conf. 2nd IEEE-NANO 2002
, pp. 201-203
-
-
Lundgren, P.1
Bengtsson, S.2
-
12
-
-
18744373863
-
-
Howell S W, Dirk S M, Childs K, Pang H, Blain M, Simonson R J, Tour J M and Wheeler D R 2005 Nanotechnology 16 754-8
-
(2005)
Nanotechnology
, vol.16
, Issue.6
, pp. 754-758
-
-
Howell, S.W.1
Dirk, S.M.2
Childs, K.3
Pang, H.4
Blain, M.5
Simonson, R.J.6
Tour, J.M.7
Wheeler, D.R.8
-
21
-
-
0000402688
-
-
Vandewalle N, Ausloos M, Houssa M, Mertens P W and Heyns M M 1999 Appl. Phys. Lett. 74 1579-81
-
(1999)
Appl. Phys. Lett.
, vol.74
, Issue.11
, pp. 1579-1581
-
-
Vandewalle, N.1
Ausloos, M.2
Houssa, M.3
Mertens, P.W.4
Heyns, M.M.5
-
22
-
-
0038103667
-
-
Chen M-J, Kang T-K, Lee Y-H, Liu C-H, Chang Y J and Fu K-Y 2001 J. Appl. Phys. 89 648-53
-
(2001)
J. Appl. Phys.
, vol.89
, Issue.1
, pp. 648-653
-
-
Chen, M.-J.1
Kang, T.-K.2
Lee, Y.-H.3
Liu, C.-H.4
Chang, Y.J.5
Fu, K.-Y.6
-
23
-
-
0028257181
-
Relation between stress-induced leakage current and dielectric breakdown in SiN-based antifuses
-
Yasuda H, Ikeda N, Ham K, Takagi M T and Yoshii I 1994 Relation between stress-induced leakage current and dielectric breakdown in SiN-based antifuses Reliability Physics Symposium: 32nd Annual Proc. IEEE Int. (San Jose, USA, 11-14 April 1994) pp 225-31
-
(1994)
Reliability Physics Symposium: 32nd Annual Proc. IEEE Int.
, pp. 225-231
-
-
Yasuda, H.1
Ikeda, N.2
Ham, K.3
Takagi, M.T.4
Yoshii, I.5
-
25
-
-
0343825173
-
-
Rodriguez R, Miranda E, Pau R, Sune J, Nafria M and Aymerich X 2000 Microelectron. Reliab. 40 707-10
-
(2000)
Microelectron. Reliab.
, vol.40
, Issue.4-5
, pp. 707-710
-
-
Rodriguez, R.1
Miranda, E.2
Pau, R.3
Sune, J.4
Nafria, M.5
Aymerich, X.6
-
26
-
-
0035417349
-
-
Meinertzhagen A, Zander D, Petit C, Jourdain M and Gogenheim D 2001 Solid State Electron. 45 1371-81
-
(2001)
Solid State Electron.
, vol.45
, Issue.8
, pp. 1371-1381
-
-
Meinertzhagen, A.1
Zander, D.2
Petit, C.3
Jourdain, M.4
Gogenheim, D.5
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