메뉴 건너뛰기




Volumn 16, Issue 10, 2005, Pages 2197-2202

Electrical properties of Si-SiO2-Si nanogaps

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTRODES; LEAKAGE CURRENTS; MOLECULES; NANOTECHNOLOGY; PHASE SEPARATION;

EID: 25444510093     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/10/037     Document Type: Article
Times cited : (16)

References (27)
  • 9
    • 0036589258 scopus 로고    scopus 로고
    • Buriak J M 2002 Chem. Rev. 102 1271-308
    • (2002) Chem. Rev. , vol.102 , Issue.5 , pp. 1271-1308
    • Buriak, J.M.1
  • 11
    • 25444493232 scopus 로고    scopus 로고
    • A silicon-oxide-silicon nanogap device structure
    • Lundgren P and Bengtsson S 2002 A silicon-oxide-silicon nanogap device structure Proc. Conf. 2nd IEEE-NANO 2002 (Washington DC, USA, 26-28 Aug. 2002) pp 201-3
    • (2002) Proc. Conf. 2nd IEEE-NANO 2002 , pp. 201-203
    • Lundgren, P.1    Bengtsson, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.