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Applied Physics Letters

Volumn 93, Issue 26, 2008, Pages

Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge

(9) Yu, H Y a Chang, S Z b Aoulaiche, M c Wang, X P c Adelmann, C c Kazer, B c Absil, P c Lauwers, A c Biesemans, S c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Taiwan)

c IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DYSPROSIUM; FIELD EFFECT TRANSISTORS; MODULATION; MOSFET DEVICES; RARE EARTH ELEMENTS; THRESHOLD VOLTAGE;

BULK DIELECTRICS; CAPPING LAYERS; DEVICE FABRICATIONS; DEVICE PERFORMANCES; GATE STACKS; INTERFACE DIPOLES; SEMI-CONDUCTORS; VOLTAGE MODULATIONS;

TRANSISTORS;

EID: 58149311063 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3058695 Document Type: Article

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.