Thermal stability and electrical characterization of HfO2 films on thermally nitrided Si

Journal of the Electrochemical Society

Volumn 151, Issue 6, 2004, Pages

  Bastos, K P ^a   Morais, J ^a   Miotti, L ^a   Soares, G V ^a   Pezzi, R P ^a   Da Silva, R C G ^a   Boudinov, H ^a   Baumvol, I J R ^b   Hegde, R I ^c   Tseng, H H ^c   Tobin, P J ^c  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRICITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; THERMODYNAMIC STABILITY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRONIC STATES; THERMAL PROCESSING; WAFERS;

HAFNIUM COMPOUNDS;

EID: 2942635829     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1738674     Document Type: Article

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