Selective area epitaxy of GaN for electron field emission devices

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 340-343

  Kapolnek, D ^a   Underwood, R D ^a   Keller, B P ^a,b   Keller, S ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; MORPHOLOGY; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ELECTRON FIELD EMISSION DEVICES; GALLIUM NITRIDE; SELECTIVE AREA EPITAXY;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0030698928     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00620-3     Document Type: Article

References (4)

1. S. Kitamura, K. Hiramatsu and N. Sawaki, Jpn. J. Appl. Phys. 34 (1995) L1184.
2. R.D. Underwood, D. Kapolnek, B.P. Keller, S. Keller, S.P. DenBaars and U.K. Mishra, Solid State Electron., submitted.
3. Y. Kato, S. Kitamura, K. Hiramatsu and N. Sawaki, J. Crystal Growth 144 (1994) 133.
4. B.P. Keller, S. Keller, D. Kapolnek, W.-N. Jiang, Y.-F. Wu, H. Masui, X.H. Wu, B. Heying, J.S. Speck, U.K. Mishra and S.P. DenBaars, J. Electron. Mater. 24 (1995) 1707.