Conductance spectroscopy study on interface electronic states of HfO 2/Si structures: comparison with interface dipole

Applied Physics Express

Volumn 2, Issue 3, 2009, Pages

  Miyata, Noriyuki ^a,b   Abe, Yasuhiro ^b   Yasuda, Tetsuji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; HAFNIUM COMPOUNDS; ION EXCHANGE; MOS CAPACITORS;

BROADENING PARAMETERS; FLAT-BAND VOLTAGE SHIFTS; INTERFACE DIPOLES; INTERFACE STATE DENSITIES; TIME CONSTANTS;

ELECTRONIC STATES;

EID: 62549151380     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.035502     Document Type: Article

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